English
Language : 

BQ24140_14 Datasheet, PDF (24/39 Pages) Texas Instruments – Integrated Dual-Input Switch-Mode One-Cell Li-Ion Charger with Full USB Compliance and USB-OTG Support
bq24140
SLUSAO5 – OCTOBER 2011
REGISTER DESCRIPTION
www.ti.com
For I2C address 6BH (USB Charger)
Status/Control Register (READ/WRITE)
Memory location: 00, Reset state: x1xx 0xxx
BIT
B7(MSB)
B6
B5
B4
B3
B2
B1
B0(LSB)
NAME
TMR_RST/OTG
EN_STAT
STAT2
STAT1
BOOST
FAULT_3
FAULT_2
FAULT_1
Read/Write
Read/Write
Read/Write
Read only
Read only
Read only
Read only
Read only
Read only
FUNCTION
Write: TMR_RST function, write “1” to reset the safety timer (auto clear)
Read: OTG pin status, 0-OTG pin at Low level, 1-OTG pin at High level;
0-Disable STAT pin function, 1-Enable STAT pin function (default 1)
00-Ready, 01-Charge in progress, 10-Charge done, 11-Fault
Boost mode, 0—Not in boost mode.
Charge mode: 000-Normal, 001-VBUS OVP, 010-Sleep mode, 011-Bad Adaptor or
VBUS<VUVLO, 100-Output OVP, 101-Thermal shutdown, 110-Timer fault, 111-No battery
Boost mode: 000-Normal, 001-VBUS OVP, 010-Over load, 011-Battery voltage is too low,
100-Battery OVP, 101-Thermal shutdown, 110-Timer fault, 111-NA
Control Register (READ/WRITE)
Memory location: 01, Reset state: 0011 0000
BIT
B7(MSB)
B6
B5
B4
B3
B2
B1
B0(LSB)
NAME
Iin_Limit_2
Iin_Limit_1
VLOWV_2 (1)
VLOWV_1 (1)
TE
CE
HZ_MODE
OPA_MODE
Read/Write
Read/Write
Read/Write
Read/Write
Read/Write
Read/Write
Read/Write
Read/Write
Read/Write
FUNCTION
00-USB host with 100-mA current limit, 01-USB host with 500-mA current limit, 10-USB
host/charger with 800-mA current limit, 11-No input current limit (default 00)
200 mV weak battery voltage threshold (default 1)
100 mV weak battery voltage threshold (default 1)
1-Enable charge current termination, 0-Disable charge current termination (default 0)
1-Charger is disabled, 0-Charger enabled (default 0)
1-High impedance mode, 0-Not high impedance mode (default 0)
1-Boost mode, 0-Charger mode (default 0)
(1) The range of weak battery voltage threshold (VLOWV) is 3.4V–3.7V with the offset of 3.4V and step of 100mV (default 3.7V).
Control/Battery Voltage Register (READ/WRITE)
Memory location: 02, Reset state: 0000 1010
BIT
NAME
Read/Write FUNCTION
B7(MSB)
B6
B5
B4
B3
B2
B1
VOREG5
VOREG4
VOREG3
VOREG2
VOREG1
VOREG0
OTG_PL
Read/Write
Read/Write
Read/Write
Read/Write
Read/Write
Read/Write
Read/Write
Battery Regulation Voltage: 640 mV (default 0)
Battery Regulation Voltage: 320 mV (default 0)
Battery Regulation Voltage: 160 mV (default 0)
Battery Regulation Voltage: 80 mV (default 0)
Battery Regulation Voltage: 40 mV (default 1)
Battery Regulation Voltage: 20 mV (default 0)
Active at High level, 0-Active at Low level (default 1)
B0(LSB) OTG_EN
Read/Write Enable OTG Pin, 0-Disable OTG pin (default 0)
• Charge voltage range is 3.5V–4.44V with the offset of 3.5V and step of 20mV (default 3.54V).
24
Submit Documentation Feedback
Product Folder Link(s): bq24140
Copyright © 2011, Texas Instruments Incorporated