MSP43020X3 Datasheet, PDF (47/92 Pages) Texas Instruments – MIXED SIGNAL MICROCONTROLLER

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MSP430F20x3
MSP430F20x2
MSP430F20x1
SLAS491H – AUGUST 2005 – REVISED AUGUST 2011
SD16_A, Temperature Sensor⁽¹⁾ (MSP430F20x3)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
TC_Sensor
V_{Offset,Sensor}
PARAMETER
Sensor temperature coefficient
Sensor offset voltage
V_Sensor
Sensor output voltage⁽²⁾
TEST CONDITIONS
Temperature sensor voltage at
T_A = 85°C
Temperature sensor voltage at
T_A = 25°C
Temperature sensor voltage at
T_A = 0°C
V_CC
MIN TYP
1.18 1.32
-100
435 475
3V
355 395
320 360
(1) Values are not based on calculations using TC_Sensor or V_{Offset,sensor} but on measurements.
(2) The following formula can be used to calculate the temperature sensor output voltage:
V_Sensor,typ = TC_Sensor ( 273 + T [°C] ) + V_{Offset,sensor} [mV] or
V_Sensor,typ = TC_Sensor T [°C] + V_Sensor(T_A = 0°C) [mV]
MAX UNIT
1.46 mV/°C
100 mV
515
435 mV
400
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST
CONDITIONS
V_CC
MIN TYP
V_{CC(PGM/ERASE)}
f_FTG
I_PGM
I_ERASE
t_CPT
t_CMErase
Program and erase supply voltage
Flash timing generator frequency
Supply current from V_CC during program
Supply current from V_CC during erase
Cumulative program time⁽¹⁾
Cumulative mass erase time
Program/erase endurance
2.2 V/3.6 V
2.2 V/3.6 V
2.2 V/3.6 V
2.2 V/3.6 V
2.2
257
1
1
20
10⁴ 10⁵
t_Retention
t_Word
t_{Block, 0}
t_{Block, 1-63}
t_{Block, End}
t_{Mass Erase}
t_{Seg Erase}
Data retention duration
Word or byte program time
Block program time for first byte or word
Block program time for each additional byte or
word
Block program end-sequence wait time
Mass erase time
Segment erase time
T_J = 25°C
(2)
(2)
(2)
(2)
(2)
(2)
100
30
25
18
6
10593
4819
MAX
3.6
476
5
7
10
UNIT
V
kHz
mA
mA
ms
ms
cycles
years
t_FTG
t_FTG
t_FTG
t_FTG
t_FTG
t_FTG
(1) The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2) These values are hardwired into the Flash Controller's state machine (t_FTG = 1/f_FTG).
RAM
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
V_(RAMh)
PARAMETER
RAM retention supply voltage ⁽¹⁾
TEST CONDITIONS
CPU halted
MIN MAX UNIT
1.6
V
(1) This parameter defines the minimum supply voltage V_CC when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
Copyright © 2005–2011, Texas Instruments Incorporated
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