DS100BR410_14 Datasheet, PDF (4/23 Pages) Texas Instruments – Low Power Quad Channel Repeater with 10.3125 Gbps Equalizer and De-Emphasis Driver

DS100BR410
SNLS326B – OCTOBER 2010 – REVISED APRIL 2013
www.ti.com
Absolute Maximum Ratings ⁽¹⁾
Supply Voltage (V_DD)
2.5 I/O Voltage
(LVCMOS and Analog Input)
3.3 LVCMOS I/O Voltage
(SDA, SDC, CS)
CML Input Voltage (IN_n+/-)
CML Output Voltage (OUT_n+/-)
Junction Temperature
Storage Temperature
ESD Rating
HBM, STD - JESD22-A114F
MM, STD - JESD22-A115-A
CDM, STD - JESD22-C101-D
Thermal Resistance
θ_JA, No Airflow,
4 layer JEDEC, 9 thermal vias
For soldering specifications: see product folder at www.ti.com
http://www.ti.com/lit/SNOA549
-0.5V to +2.75V
-0.5V to +2.75V
-0.5V to +4.0V
-0.5V to +2.75V
-0.5V to +2.75V
+150°C
-65°C to +150°C
≥7 kV
≥200 V
≥1250 V
27.6 °C/W
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied.
Recommended Operating Conditions⁽¹⁾
Supply Voltage
V_DD to GND
Ambient Temperature
Min
2.375
-40
Typ
Max
Units
2.5
2.625
V
25
+85
°C
(1) The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated
beyond such conditions.
Electrical Characteristics
Over recommended operating supply and temperature ranges with default register settings unless other specified. ⁽¹⁾
Parameter
Test Conditions
Min
Typ
Max
Units
POWER
PD
Power Supply Consumption
Device Output Enabled
(EN[3:0] = High),
VOD_SEL = open (1.0 Vp-p)
220
275
mW
PS_NT
Supply Noise Tolerance⁽²⁾
2.5 LVCMOS DC Specifications
Device Output Disable
(EN[3:0] = Low)
50 Hz to 100 Hz
100 Hz to 10 MHz
10 MHz to 5.0 GHz
25
40
mW
100
mV_P-P
40
mV_P-P
10
mV_P-P
V_IH
High Level Input Voltage
V_IL
Low Level Input Voltage
V_OH
High Level Output Voltage
I_OH = -3mA
V_OL
Low Level Output Voltage
I_OL = 3mA
I_IN
Input Leakage Current
V_IN = V_DD
V_IN = GND
1.75
-0.3
V_DD
V
0.7
V
2.0
V
0.4
V
+10
μA
-10
μA
(1) Typical values represent most likely parametric norms at V_DD = 2.5V, T_A = 25°C., and at the Recommended Operation Conditions at the
time of product characterization and are not ensured.
(2) Specification is ensured by characterization at optimal boost setting and is not tested in production.
4
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