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BQ24030-Q1 Datasheet, PDF (4/34 Pages) Texas Instruments – SINGLE-CHIP CHARGE AND SYSTEM POWER-PATH MANAGEMENT IC
bq24030-Q1
bq24031-Q1
SLUS793B – APRIL 2008 – REVISED OCTOBER 2009.................................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS
over junction temperature range (0°C ≤ TJ ≤ 125°C) and recommended supply voltage range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
Input Bias Currents
ICC(SPLY)
ICC(SLP)
Active supply current, VCC
Sleep current (current into
BAT pin)
VVCC > VVCC(min)
V(AC) < V(BAT), V(USB) < V(BAT),
2.6 V ≤ VI(BAT) ≤ VO(BAT-REG),
Excludes load on OUT pin
1
2
2
5
ICC(AS-STDBY)
AC standby current
ICC(USB-STDBY)
USB standby current
ICC(BAT-STDBY)
BAT standby current
IIB(BAT)
Charge done current, BAT
High AC Cutoff Mode
VI(AC) ≤ 6 V, Total current into AC pin with chip disabled,
Excludes all loads, CE = low,
After t(CE-HOLDOFF) delay
Total current into USB pin with chip disabled, Excludes
all loads, CE = low,
After t(CE-HOLDOFF) delay
Total current into BAT pin with AC and/or USB present
and chip disabled, Excludes all loads (OUT and LDO),
CE = low, After t(CE-HOLDOFF) delay, 0°C ≤ TJ ≤ 85°C(1)
Charge finished, AC or USB supplying the load
200
200
45
60
1
5
VCUT-OFF
Input AC cutoff voltage,
bq24035
VI(AC) > 6.8 V, AC FET (Q1) turns off, USB FET (Q3)
turns on if USB power present, otherwise BAT FET (Q2)
turns on
6.1
6.4
6.8
LDO Output
VO(LDO)
Output regulation voltage
Regulation accuracy(2)
Active only if AC or USB is present,
VI(OUT) ≥ VO(LDO) + (IO(LDO) × RDS(on))
3.3
–5
5
IO(LDO)
Output current
20
RDS(on)
On resistance
OUT to LDO
50
C(OUT) (3)
Output capacitance
1
OUT Pin – Voltage Regulation(4)
VO(OUT-REG)
Output regulation voltage VI(AC) ≥ 6 V + VDO
OUT Pin – DPPM Regulation
V(DPPM-SET)
DPPM set point(5)
VDPPM-SET < VOUT
I(DPPM-SET)
DPPM current source
AC or USB present
SF
DPPM scale factor
V(DPPM-REG) = V(DPPM-SET) × SF
OUT Pin – FET (Q1, Q3, and Q2) Dropout Voltage (RDSon)
2.6
95
1.139
6.0
100
1.150
6.3
5
105
1.162
V(ACDO)
V(USBDO) (7)
V(BATDO)
AC to OUT dropout
voltage (6)
USB to OUT dropout
voltage
BAT to OUT dropout
voltage (discharging)
VI(AC) ≥ VCC(min), PSEL = high, II(AC) = 1 A,
(IO(OUT) + IO(BAT)), or no AC
VI(USB) ≥ VCC(min), PSEL = low, ISET2 = high,
II(USB) = 0.4 A, (IO(OUT) + IO(BAT)), or no AC
VI(USB) ≥ VCC(min), PSEL = low, ISET2 = low,
II(USB) = 0.08 A, (IO(OUT) + IO(BAT))
VI(BAT) ≥ 3 V, II(BAT)= 1 A, VCC < VI(BAT)
300
475
140
180
28
36
40
100
UNIT
mA
μA
μA
μA
μA
μA
V
V
%
mA
Ω
μF
V
V
μA
mV
mV
mV
(1) This includes the quiescent current for the integrated LDO.
(2) In standby mode (CE low) the accuracy is ±10%.
(3) LDO output capacitor is not required, but one with a value of 0.1 μF is recommended.
(4) When power is applied to the USB pin and PSEL is low, the USB input is switched straight through to the OUT pin (not regulated). This
voltage may drop to the DPPM-OUT threshold or battery voltage (which ever is higher) if the USB input current limit is active.
(5) V(DPPM-SET) is scaled up by the scale factor for controlling the output voltage V(DPPM-REG).
(6) VDO(max), dropout voltage is a function of the FET, RDS(on), and drain current. The dropout voltage increases proportionally to the
increase in current.
(7) RDS(on) of USB FET Q3 is calculated by: (VUSB – VOUT) / (IOUT + IBAT) when II(USB) ≤ II(USB-MIN) (FET fully on, not in regulation).
4
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