OMAP5912_16 Datasheet, PDF (200/270 Pages) Texas Instruments – OMAP5912 Applications Processor

Electrical Specifications
5.3 Electrical Characteristics Over Recommended Operating Case Temperature
Range (Unless Otherwise Noted) (Continued)
PARAMETER
I_DDCP(A) Core and I/O voltage supply current active
TEST CONDITIONS
Sum of CV_DDx and DV_DDx
currents^†
MIN
TYP
393
MAX UNIT
mA
V_DD4
C_i
Input capacitance
ZZG balls P9 and R8
(ZDY/GDY balls T2 and U1)
(USB)
6
mA
7
pF
All other I/O pins
4
C_o
Output capacitance
ZZG balls P9 and R8
(ZDY/GDY balls T2 and U1)
(USB)
7
pF
All other I/O pins
4
† _{ARM926 running Dhrystone algorithm and DSP runnning GSM Full Rate Vocoder in internal memory. CVDD = 1.6 V, DVDD = 3.3 V,}
V_DD4 = 1.8 V).
NOTE: These power measurements were taken at 25°C on an OMAP5912 OSK, running Dhrystone benchmark on the ARM and GSM vocoder
on the DSP. These typical case numbers can vary based on board layout or application code being run. Please use this information
only as a general guideline. In order to get more accurate power estimates, you should expect to do your own power measurements
with your own set up and application code running.
200 SPRS231E
December 2003 − Revised December 2005