BQ24292I Datasheet, PDF (9/42 Pages) Texas Instruments – I2C Controlled 4.5A Single Cell USB/Adapter Charger With Narrow VDC Power Path Management and USB OTG

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bq24292i
SLUSBI4 – APRIL 2013
ELECTRICAL CHARACTERISTICS (continued)
V_{VBUS_UVLOZ} < V_VBUS < V_ACOV and V_VBUS > V_BAT + V_SLEEP, T_J = –40°C to 125°C and T_J = 25°C for typical values unless other
noted.
PARAMETER
POWER PATH MANAGEMENT
V_{SYS_RANGE}
V_{SYS_MIN}
R_ON(RBFET)
R_ON(HSFET)
Typical System regulation voltage
System voltage output
Internal top reverse blocking MOSFET on-
resistance
Internal top switching MOSFET on-
resistance between PMID and SW
R_ON(LSFET)
Internal bottom switching MOSFET on-
resistance between SW and PGND
V_FWD
BATFET forward voltage in supplement
mode
V_{SYS_BAT}
SYS/BAT Comparator
V_BATGD
Battery good comparator rising threshold
V_{BATGD_HYST}
Battery good comparator falling threshold
BATTERY CHARGER
V_{BAT_REG_ACC}
Charge voltage regulation accuracy
I_{ICHG_REG_ACC}
Fast charge current regulation accuracy
I_{CHG_20pct}
V_BATLOWV
V_{BATLOWV_RISE}
I_{PRECHG_ACC}
I_{TERM_ACC}
V_SHORT
V_{SHORT_HYST}
I_SHORT
V_RECHG
t_RECHG
Charge current with 20% option on
Battery LOWV falling threshold
Battery LOWV rising threshold
Precharge current regulation accuracy
Termination current accuracy
Battery Short Voltage
Battery Short Voltage hysteresis
Battery short current
Recharge threshold below VBAT_REG
Recharge deglitch time
R_{ON_BATFET}
SYS-BAT MOSFET on-resistance
INPUT VOLTAGE/CURRENT REGULATION
V_{INDPM_REG_ACC}
Input voltage regulation accuracy
I_{USB_DPM}
USB Input current regulation limit, VBUS =
5V, current pulled from SW
I_{ADPT_DPM}
Input current regulation accuracy
I_{IN_START}
Input current limit during system start up
K_ILIM
I_IN = K_ILIM/R_ILIM
BAT OVER-VOLTAGE PROTECTION
V_BATOVP
V_{BATOVP_HYST}
t_BATOVP
Battery over-voltage threshold
Battery over-voltage hysteresis
Battery over-voltage deglitch time to disable
charge
THERMAL REGULATION AND THERMAL SHUTDOWN
T_{Junction_REG}
T_SHUT
T_{SHUT_HYS}
Junction temperature regulation accuracy
Thermal shutdown rising temperature
Thermal shutdown hysteresis
Thermal shutdown rising deglitch
Thermal shutdown falling deglitch
TEST CONDITIONS
I_SYS = 0A, Q4 off, V_BAT up to 4.2 V,
REG01[3:1]=101, V_SYSMIN = 3.5 V
REG01[3:1]=101, V_SYSMIN = 3.5 V
Measured between VBUS and PMID
T_J = –40°C – 85°C
T_J = -40°C – 125°C
T_J = –40°C – 85°C
T_J = -40°C – 125°C
BAT discharge current 10mA
V_SYS falling
V_BAT rising
V_BAT falling
V_BAT = 4.112V and 4.208V
V_BAT = 3.8V, I_CHG = 1792mA, T_J = 25°C
V_BAT = 3.8V, I_CHG = 1792mA, T_J = –20°C – 125°C
V_BAT = 3.1V, I_CHG = 104mA, REG02=03
Fast charge to precharge, REG04[1] = 1
Precharge to fast charge, REG04[1] = 1
VBAT = 2.6V, I_CHG = 256mA
I_TERM = 256mA, I_CHG = 960mA
VBAT falling
VBAT rising
VBAT<2.2V
VBAT falling, REG04[0] = 0
VBAT falling, REG04[0]=0
T_J = 25°C
T_J = –40°C – 125°C
REG00[6:3]=0110 (4.36V) or 1011 (4.76V)
USB100
USB150
USB500
USB900
Input current limit 1.5A, REG00[2:0] = 101
VSYS<2.2V
I_INDPM = 1.5A
V_BAT rising, as percentage of V_{BAT_REG}
V_BAT falling, as percentage of V_{BAT_REG}
REG06[1:0] = 11
Temperature increasing
Temperature increasing delay
Temperature decreasing delay
MIN TYP
3.5
3.55 3.65
23
27
27
32
32
30
90
3.55
100
–0.5%
–4%
–7%
75
2.6
2.8
2.8
3.0
–20%
–20%
2
200
100
100
20
12
12
–2%
85
125
440
750
1.30
100
485
104%
2%
1
115
120
160
30
1
1
MAX UNITS
4.35 V
V
38 mΩ
35
mΩ
45
45
mΩ
48
mV
mV
V
mV
0.5%
4%
7%
150 mA
2.9 V
3.1 V
20%
20%
V
mV
mA
mV
ms
15
mΩ
20
2%
100 mA
150 mA
500 mA
900 mA
1.55 A
mA
530 A x Ω
µs
125 °C
°C
°C
ms
ms
Copyright © 2013, Texas Instruments Incorporated
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