BQ24160A_15 Datasheet, PDF (8/52 Pages) Texas Instruments – bq2416xx 2.5A, Dual-Input, Single-Cell Switched-Mode Li-Ion Battery Charger with Power Path Management and I2C Interface

bq24160, bq24160A, bq24161
bq24161B, bq24163, bq24168
SLUSAO0F – NOVEMBER 2011 – REVISED JULY 2014
www.ti.com
Electrical Characteristics (continued)
Circuit of Figure 21, V_SUPPLY = V_USB or V_IN (whichever is supplying the IC), V_UVLO < V_SUPPLY < V_OVP and V_SUPPLY > V_BAT+V_SLP, T_J
= -40°C – 125°C and T_J = 25ºC for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
V_DETECT
Battery detection threshold
During battery detection source cycle
During battery detection sink cycle
3.3
V
3.0
I_DETECT
Battery detection current before charge done (sink
current)
Termination enabled (EN_TERM = 1)
2.5
mA
t_DETECT
Battery detection time
V_IH
PSEL, CD Input high logic level
V_IL
PSEL, CD Input low logic level
INPUT CURRENT LIMITING
Termination enabled (EN_TERM = 1)
250
1.3
ms
V
0.4
V
I_{IN_USB}
Input current limit threshold (USB input)
I_{IN_IN}
V_{IN_DPM}
Input current limit threshold (IN input)
Input based DPM threshold range
I_USBLIM = USB100
I_USBLIM = USB500
USB charge mode, V_USB = 5V,
DC Current pulled from SW
I_USBLIM = USB150
I_USBLIM = USB900
I_USBLIM = USB800
I_USBLIM = 1.5A
IN charge mode, V_IN = 5V,
DC Current pulled from SW
I_INLIM = 1.5A
I_INLIM = 2.5A
Charge mode, programmable via I²C, both inputs
90
450
135
800
700
1250
1.35
2.3
4.2
95
475
142.5
850
750
1400
1.5
2.5
100
500
150
mA
900
800
1500
1.65
A
2.8
4.76
V
V_{IN_DPM} threshold accuracy
VDRV BIAS REGULATOR
–2
+2%
V_DRV
Internal bias regulator voltage
I_DRV
DRV output current
V_{DO_DRV}
DRV Dropout voltage (V_SUPPLY – V_DRV)
STATUS OUTPUT (STAT, INT)
V_SUPPLY > 5.45V
I_SUPPLY = 1A, V_SUPPLY = 5V, I_DRV = 10mA
5
5.2
5.45
V
10
mA
450
mV
V_OL
Low-level output saturation voltage
I_IH
High-level leakage current
PROTECTION
I_O = 10mA, sink current
V_STAT = V_INT = 5V
0.4
V
1
µA
V_UVLO
V_{UVLO_HYS}
V_SLP
V_{SLP_EXIT}
IC active threshold voltage
IC active hysteresis
Sleep-mode entry threshold, V_SUPPLY-V_BAT
Sleep-mode exit hysteresis
Deglitch time for supply rising above V_SLP+V_{SLP_EXIT}
V_{BAD_SOURCE} Bad source detection threshold
V_IN rising
V_IN falling from above V_UVLO
2.0V ≤V_BAT ≤V_BATREG, V_IN falling
2.0V ≤V_BAT ≤V_BATREG
Rising voltage, 2mV over drive, t_RISE = 100ns
After Bad Source Detection completes
During Bad Source Detection
3.6
3.8
120
150
0
40
40
100
30
V_{IN_DPM}
– 80 mV
V_{IN_DPM}
+ 80 mV
4
V
mV
100
mV
175
mV
ms
V
V
t_DGL(BSD)
Deglitch on bad source detection
V_OVP
Input supply OVP threshold voltage
V_OVP(HYS)
V_BOVP
t_DGL(BOVP)
V_BATUVLO
I_LIMIT
T_SHTDWN
V_OVP hysteresis
Battery OVP threshold voltage
V_BOVP hysteresis
Battery OVP deglitch
Battery undervoltage lockout threshold
Cycle-by-cycle current limit
Thermal trip
Thermal hysteresis
USB, V_USB Rising
IN, V_IN Rising (bq24160/1/1B/3)
IN, V_IN Rising (bq24168)
Supply falling from V_OVP
V_BAT threshold over V_OREG to turn off charger during charge
Lower limit for V_BAT falling from above V_BOVP
BOVP fault shown in register once t_DGL(BOVP) expires.
Buck converter shut down immediately when V_BAT > V_BATOVP
V_BAT rising, 100mV hysteresis
V_SYS shorted
6.3
10.3
6.3
1.025 ×
V_BATREG
32
6.5
10.5
6.5
100
1.05 ×
V_BATREG
1
1
6.7
10.7
6.7
1.075 ×
V_BATREG
ms
V
mV
V
% of
V_BATREG
ms
2.5
4.1
4.9
165
10
V
5.6
A
°C
T_REG
Thermal regulation threshold
Safety timer accuracy
Charge current begins to cut off
(bq24160/1/1B/3 Only)
–20%
120
°C
20%
PWM
Internal top reverse blocking MOSFET on-resistance
I_{IN_LIMIT} = 500mA, Measured from USB to PMIDU
I_{IN_LIMIT} = 500mA, Measured from IN to PMIDI
95
175
mΩ
45
80
8
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