5962-9958101QXC Datasheet, PDF (8/17 Pages) Texas Instruments – MICROCIRCUIT DATA SHEET

MNAR629A-X REV 0A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
AC: SUBSYSTEM WRITE CHARACTERISTICS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: Vdd = Vcc = 5V +5%, Vss = GND, -55 C <TA<+125 C, CL = 50pF
SYMBOL
TDBABR
PARAMETER
Time from BUSA
Low to BUSR
Tri-State
CONDITIONS
0 WAIT, Vdd = 5V +5%
1 WAIT, Vdd = 5V +5%
MAX WAIT, Vdd = 4.75V
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
17T+61 nS 9, 10,
11
21T+61 nS 9, 10,
11
148T+6 nS
1
9, 10,
11
AC: INTERNAL REGISTER ACCESS CHARACTERISTICS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: Vdd = Vcc = 5V +5%, Vss = GND, -55 C <TA<+125 C, CL = 50pF
TDASDS
Delay from ASO
High to DSO
falling edge
20
nS
TDCSAS
Delay from CS
falling edge to
ASO falling edge
0
nS
TDCSDS
Delay from DSO
rising edge to CS
rising edge
0
nS
TDCSFW
Delay from CS
falling edge to
WAIT High
26
nS
TDCSRW
Delay from CS
rising edge to
WAIT release
27
nS
TDHO
Data valid after
rising edge of
DSO
0
nS
TDSO
Error register
Data valid after
falling edge of
DSO
Vdd = 5V +5%
2T+25 nS
TDSO
LWM/IVR DAta
Valid after
falling edge of
DSO
40
nS
THAI
Address hold time
after rising edge
of ASO
15
nS
TSAI
Address setup
time prior to
rising edge of
ASO
30
nS
TWAS
Address strobe
pulse width
30
nS
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
10, 11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
8