5962-9958101QXC Datasheet, PDF (4/17 Pages) Texas Instruments – MICROCIRCUIT DATA SHEET

MNAR629A-X REV 0A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: FUNCTIONAL TESTS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vdd = Vcc = 5V +5%, Vss = GND, -55 C<Ta<+125 C
SYMBOL
IOPL
IOPH
DIDD
Vt+
Vt-
VH
PARAMETER
CONDITIONS
Output Leakage
Vo = Vss
Current - Pull-Up
Output Leakage
Vo = Vdd, Vdd = Vdd max
Current - Pull-Up
Dynamic Supply
Current
FC = 32MHz, Vdd = Vdd max
Positive Going
Schmitt Trigger
Input Threshold
Vdd = Vdd max, Vdd = Vdd min
Negative Going
Schmitt Trigger
Input Threshold
Vdd = Vdd max, Vdd = Vdd min
Schmitt
Hysteresis
Voltage
Vdd = Vdd max, Vdd = Vdd min
Gross Functional Vdd = 5.0V, Vdd = 4.75V, Vdd = 5.25V
Fmax Functional Vdd = 5.0V, Vdd = 5.25V, Vdd = 4.75V
NOTES
3
PIN-
NAME
MIN
-200
MAX
UNIT
SUB-
GROUPS
uA 1, 2,
3
20
uA 1, 2,
3
110
mA 1, 2,
3
0.75 V
Vdd
1, 2,
3
1.0
V
1, 2,
3
1.0
V
1, 2,
3
Pass
Pass
7, 8
7, 8
AC: SUBSYSTEM READ CHARACTERISTICS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: Vdd = Vcc = 5V +5%, Vss = GND, -55 C <TA<+125 C, CL = 50pF
TAAS
AD Setup Time to Vdd = 4.75V, Vdd = 5.25V
ASO High
3T-40 3T+25 nS
TBDMA
DMA Start To DMA Vdd = 5V +5%
Start
315T
nS
TD3S
Delay from DSO
rising edge to
Tri-State
Vdd = 4.75V, Vdd = 5.25V
1T-20 1T+40 nS
TDAS
Delay from RICK
to ASO Low
Vdd = 4.75V, Vdd = 5.25V
1T
1T+40 nS
TDBAH
BSAO High Delay
from BUSA High
25
nS
TDBAK
BUSA Response
Time
Vdd = 4.75V, Vdd = 5.25V
0
130T nS
TDBAK1
BUSA Response
Time (1 WAT)
Vdd = 5V +5%
0
126T nS
TDBAKW
BUSA Response
Time (WAIT)
Vdd = 5V +5%
0
122T-T nS
WRWT
TDBAL
BSAO Low Delay
from BUSR High,
BUSA Low
25
nS
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
4