5962-9958101QXC Datasheet, PDF (5/17 Pages) Texas Instruments – MICROCIRCUIT DATA SHEET

MNAR629A-X REV 0A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
AC: SUBSYSTEM READ CHARACTERISTICS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: Vdd = Vcc = 5V +5%, Vss = GND, -55 C <TA<+125 C, CL = 50pF
SYMBOL
TDBABR
PARAMETER
Time from BUSA
low to BUSR
Tri-State
0 Wait
1 Wait
CONDITIONS
Max Wait
TDBRBA
TDBRQ
TDBSW
TDDS
TDDSBR
TDIO
TDRDSH
BUSR High to BUSA
High Delay
Delay from RICK
to BUSR Low
Time BUSA Low
Prior to RICK
DSO Delay from
RICK
DSO High to BUSR Vdd = 4.75V, Vdd = 5.25V
Tri-State
IOCK high after
rising edge of
RICK
RICK to DSO High Vdd = 4.75V, Vdd = 5.25V
TDRW
THASA
THAW
THDI
THDS
THRW
THWAS
TSDI
TSWA
TWAS
RWO Delay from
RICK
AD Hold Time from Vdd = 4.75V, Vdd = 5.25V
ASO High
Wait Hold after
RICK
Data in Hold
after RICK
DSO Hold after
WAIT
Vdd = 4.75V, Vdd = 5V +5%
RWO Hold after
WAIT
Vdd = 4.75V, Vdd = 5V +5%
ASO Hold after
WAIT
Vdd = 5V +5%
Data Setup Prior
to RICK
WAIT Setup to
RICK
ASO Pulse Width Vdd = 4.75V, Vdd = 5.25V
NOTES
PIN-
NAME
MIN
31
1T-10
1T-20
MAX UNIT
17T+61 nS
SUB-
GROUPS
9, 10,
11
21T+61 nS 9, 10,
11
148T+6 nS
1
9, 10,
11
nS 9, 10,
11
80
nS 9, 10,
11
5T+26 nS 9, 10,
11
80
nS 9, 10,
11
1T+50 nS 9, 10,
11
37
nS 9, 10,
11
1T
1T+40 nS
80
nS
2T-35 2T+40 nS
22
nS
30
nS
5T
9T+30 nS
6T
10T+30 nS
6T
10T+30 nS
30
nS
22
nS
2T-25 2T+25 nS
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
5