5962-9958101QXC Datasheet, PDF (11/17 Pages) Texas Instruments – MICROCIRCUIT DATA SHEET

MNAR629A-X REV 0A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
AC: INTERNAL REGISTER/TRANSMIT DATA CHARACTERISTICS (Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: Vdd = Vcc = 5V +5%, Vss = GND, -55 C <TA<+125 C, CL = 50pF
SYMBOL
TDERR
TDERR
TDFSTAC
TDINT
TDLWM
TDLXIVS
TDRSTAC
TDTXIVS
THXAL
THXAT
TSAX
TSDMA
TWBUSQ
TWBUSQ1
TWXIVS
PARAMETER
CONDITIONS
Delay from BUSQ Vdd = 4.75V, Vdd = 5V +5%
to Error Reg.
Valid (Non NXBA)
BUSQ to error
register valid
(NXBA)
Vdd = 5V +5%
Delay from XIVS
to STAC Low
Vdd = 4.75V, Vdd = 5.25V
Delay from IVR
valid to XIVS
Delay from BUSQ
to LWM valid
Vdd = 5V +5%
Delay from 3rd
bit to leading
XIVS
Vdd = 4.75V, Vdd = 5.25V
Delay from XIVS
to STAC High
Vdd = 4.75V, Vdd = 5.25V
Delay from parity Vdd = 4.75V, Vdd = 5V +5%
bit to trailing
XIVS
AO hold after
leading XIVS
falling edge
Vdd = 5V +5%
AO hold after
Vdd = 4.75V, Vdd = 5.25V
trailing edge of
XIVS falling
AO setup prior to Vdd = 4.75V, Vdd = 5.25V
falling edge of
XIVS
Delay from bit 7 Vdd = 4.75V, Vdd = 5.25V
to DMA start
Width of BUSQ
Vdd = 5V +5%
High during data
sync
BUS Quiet High
during
interstring gap
Vdd = 5V +5%
XIVS pulse Low
width
Vdd = 4.75V, Vdd = 5.25V
NOTES
PIN-
NAME
MIN
15T
MAX
124T
UNIT
nS
SUB-
GROUPS
9, 10,
11
-340T
nS 9, 10,
11
5T-30 5T+35 nS
14T
20T
nS
20T
nS
3T-35 3T+55 nS
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
2T-30 2T+35 nS
48T
96T
nS
9, 10,
11
9, 10,
11
65T
nS 9, 10,
11
4T-35
nS 9, 10,
11
2T-35
nS 9, 10,
11
13T-35 13T+60 nS
30T
38T
nS
9, 10,
11
9, 10,
11
55T
64T
nS 9, 10,
11
2T-10 2T+35 nS 9, 10,
11
11