5962-9958101QXC Datasheet, PDF (3/17 Pages) Texas Instruments – MICROCIRCUIT DATA SHEET

MNAR629A-X REV 0A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: DYNAMIC TESTS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vdd = Vcc = 5V +5%, Vss = GND, -55 C<Ta<+125 C
SYMBOL
PARAMETER
Continuity Test
CONDITIONS
Upper Diode, Lower Diode
SIDD
Known State Idd Vdd = 5V
SISS
Cin
Cout
Vih
Vil
Voh
Vol
Ioh
Iol
Iil
Iih
Ipu
IOZH
IOZL
Known State Iss
(Magnitude)
Vdd = 4.75V, Vdd = 5.0V, Vdd = 5.25V
Input Capacitance f = 1Mhz
Output
Capacitance
f = 1Mhz
High level Input Vdd = Vdd max, Vdd = Vdd min
Voltage
Low Level Input
Voltage
Vdd = Vdd max, Vdd = Vdd min
High Level Output Vi = Vdd or Vss, Ioh = -20uA
Voltage
Low Level Output Vi = Vdd or Vss, Iol = 20uA
Voltage
High Level Output Vi = Vdd or Vss, Voh = Vdd -0.8V,
Current
Vdd = Vdd min
Low Level Output Vi = Vdd or Vss, Vol = 0.4,
Current
Vdd = Vdd min
Input Leakage
Current
No Pull Resistor
Input Leakage
Current
Vi = Vdd or Vss, Vdd = Vdd max
Input Current
With Pull-up
Resistor
Vi = Vss or Vdd, Vdd = Vdd max
Output leakage
Vo = Vdd, Vdd = Vdd max
Current High, No
Pull
Output leakage
Current Low, No
Pull
Vo = Vss, Vdd = Vdd max
NOTES
PIN-
NAME
MIN
Pass
1
1
MAX
UNIT
SUB-
GROUPS
1, 2,
3
6
mA 1, 2,
3
1.5
mA 1, 2,
3
20
pF 4
20
pF 4
2
2.0
V
1, 2,
3
2
0.8
V
1, 2,
3
Vdd-0.
1
V
1, 2,
3
0.1
V
1, 2,
3
-4.0 mA 1, 2,
3
4.0
mA 1, 2,
3
-10
10
uA 1, 2,
3
-10
10
uA 1, 2,
3
-200 20
uA 1, 2,
3
3
10
uA 1, 2,
3
3
-10
uA 1, 2,
3
3