BQ4010 Datasheet, PDF (7/14 Pages) Texas Instruments – 8Kx8 Nonvolatile SRAM

Write Cycle No. 1 (WE-Controlled) ^1,2,3
bq4010/bq4010Y
Write Cycle No. 2 (CE-Controlled) ^1,2,3,4,5
Notes:
1. CE or WE must be high during address transition.
2. Because I/O may be active (OE low) during this period, data input signals of opposite polarity to the
outputs must not be applied.
3. If OE is high, the I/O pins remain in a state of high impedance.
4. Either tWR1 or tWR2 must be met.
5. Either tDH1 or tDH2 must be met.
Sept. 1996 D
6-7