BQ4010 Datasheet, PDF (3/14 Pages) Texas Instruments – 8Kx8 Nonvolatile SRAM

bq4010/bq4010Y
Recommended DC Operating Conditions (TA = TOPR)
Symbol
Parameter
Minimum Typical Maximum Unit
Notes
VCC Supply voltage
VSS Supply voltage
VIL Input low voltage
VIH Input high voltage
4.5
5.0
5.5
V bq4010Y/bq4010Y-xxxN
4.75
5.0
5.5
V bq4010
0
0
0
V
-0.3
-
0.8
V
2.2
-
VCC + 0.3
V
Note:
Typical values indicate operation at TA = 25°C.
DC Electrical Characteristics (TA = TOPR, VCCmin ≤ VCC ≤ VCCmax)
Symbol
Parameter
ILI
Input leakage current
ILO
VOH
VOL
ISB1
Output leakage current
Output high voltage
Output low voltage
Standby supply current
ISB2
Standby supply current
ICC
VPFD
VSO
Operating supply current
Power-fail-detect voltage
Supply switch-over voltage
Minimum
-
-
2.4
-
-
-
-
4.55
4.30
-
Typical
-
-
-
-
4
2.5
65
4.62
4.37
3
Maximum
±1
±1
-
0.4
7
4
75
4.75
4.50
-
Unit
µA
µA
V
V
mA
mA
mA
V
V
V
Conditions/Notes
VIN = VSS to VCC
CE = VIH or OE = VIH or
WE = VIL
IOH = -1.0 mA
IOL = 2.1 mA
CE = VIH
CE ≥ VCC - 0.2V,
0V ≤ VIN ≤ 0.2V,
or VIN ≥ VCC - 0.2V
Min. cycle, duty = 100%,
CE = VIL, II/O = 0mA
bq4010
bq4010Y
Note:
Typical values indicate operation at TA = 25°C, VCC = 5V.
Capacitance (TA = 25°C, F = 1MHz, VCC = 5.0V)
Symbol
Parameter
Minimum Typical
CI/O
Input/output capacitance
-
-
CIN
Input capacitance
-
-
Note:
These parameters are sampled and not 100% tested.
Maximum
10
10
Unit
Conditions
pF Output voltage = 0V
pF Input voltage = 0V
Sept. 1996 D
6-3