BQ4010 Datasheet, PDF (5/14 Pages) Texas Instruments – 8Kx8 Nonvolatile SRAM

Read Cycle No. 1 (Address Access) ^1,2
bq4010/bq4010Y
Read Cycle No. 2 (CE Access) ^1,3,4
Read Cycle No. 3 (OE Access) ^1,5
Notes: 1. WE is held high for a read cycle.
2. Device is continuously selected: CE = OE = VIL.
3. Address is valid prior to or coincident with CE transition low.
4. OE = VIL.
5. Device is continuously selected: CE = VIL.
Sept. 1996 D
6-5