BQ24190_15 Datasheet, PDF (7/52 Pages) Texas Instruments – bq2419x I2C Controlled 4.5-A Single Cell USB/Adapter Charger with Narrow VDC Power Path Management and USB OTG

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bq24190, bq24192, bq24192I
SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014
Electrical Characteristics (continued)
V_{VBUS_UVLOZ} < V_VBUS < V_ACOV and V_VBUS > V_BAT + V_SLEEP, T_J = –40°C to 125°C and T_J = 25°C for typical values unless other
noted.
PARAMETER
TEST CONDITIONS
MIN TYP
MAX UNIT
VBUS/BAT POWER UP
V_{VBUS_OP}
VBUS operating range
V_{VBUS_UVLOZ}
VBUS for active I²C, no battery
V_SLEEP
Sleep mode falling threshold
V_SLEEPZ
Sleep mode rising threshold
V_ACOV
VBUS over-voltage rising threshold
V_{ACOV_HYST}
VBUS over-voltage falling hysteresis
V_{BAT_UVLOZ}
Battery for active I²C, no VBUS
V_{BAT_DPL}
Battery depletion threshold
V_{BAT_DPL_HY}
Battery depletion rising hysteresis
V_VBUSMIN
Bad adapter detection threshold
I_BADSRC
Bad adapter detection current source
t_BADSRC
Bad source detection duration
POWER PATH MANAGEMENT
V_VBUS rising
V_VBUS falling, V_VBUS-VBAT
V_VBUS rising, V_VBUS-VBAT
V_VBUS rising
V_VBUS falling
V_BAT rising
V_BAT falling
V_BAT rising
V_VBUS falling
3.9
3.6
35 80
170 250
17.4 18
700
2.3
2.4
170
3.8
30
30
17
V
V
120 mV
350 mV
V
mV
V
2.6
V
260 mV
V
mA
ms
V_{SYS_RANGE}
V_{SYS_MIN}
R_ON(RBFET)
Typical system regulation voltage
System voltage output
Internal top reverse blocking MOSFET on-
resistance
Isys = 0 A, Q4 off, V_BAT up to 4.2 V,
REG01[3:1] = 101, V_SYSMIN = 3.5 V
REG01[3:1] = 101, V_SYSMIN = 3.5 V
Measured between VBUS and PMID
3.5
3.55 3.65
23
4.35
V
V
38 mΩ
R_ON(HSFET)
Internal top switching MOSFET on-resistance
between PMID and SW
R_ON(LSFET)
Internal bottom switching MOSFET on-resistance
between SW and PGND
V_FWD
BATFET forward voltage in supplement mode
V_{SYS_BAT}
SYS/BAT Comparator
V_BATGD
Battery good comparator rising threshold
V_{BATGD_HYST}
Battery good comparator falling threshold
BATTERY CHARGER
T_J = –40°C to 85°C
T_J = -40°C to 125°C
T_J = –40°C to 85°C
T_J = -40°C to 125°C
BAT discharge current 10 mA
V_SYS falling
V_BAT rising
V_BAT falling
27
35
mΩ
27
45
32
45
mΩ
32
48
30
mV
90
mV
3.55
V
100
mV
V_{BAT_REG_ACC} Charge voltage regulation accuracy
I_{ICHG_REG_ACC} Fast charge current regulation accuracy
V_BAT = 4.112 V and 4.208 V
V_BAT = 3.8 V, I_CHG = 1792 mA, T_J = 25°C
V_BAT = 3.8 V, I_CHG = 1792 mA, T_J = –20°C to
125°C
–0.5%
–4%
–7%
0.5%
4%
7%
I_{CHG_20pct}
V_BATLOWV
V_{BATLOWV_HYST}
I_{PRECHG_ACC}
I_{TERM_ACC}
V_SHORT
V_{SHORT_HYST}
I_SHORT
V_RECHG
t_RECHG
Charge current with 20% option on
Battery LOWV falling threshold
Battery LOWV rising threshold
Precharge current regulation accuracy
Termination current accuracy
Battery Short Voltage
Battery Short Voltage hysteresis
Battery short current
Recharge threshold below VBAT_REG
Recharge deglitch time
R_{ON_BATFET}
SYS-BAT MOSFET on-resistance
V_BAT = 3.1 V, I_CHG = 104 mA, REG02 = 03
Fast charge to precharge, REG04[1] = 1
Precharge to fast charge, REG04[1] = 1
VBAT = 2.6 V, I_CHG = 256 mA
I_TERM = 256 mA, I_CHG = 960 mA
VBAT falling
VBAT rising
VBAT < 2.2V
VBAT falling, REG04[0] = 0
VBAT falling, REG04[0] = 0
T_J = 25°C
T_J = –40°C to 125°C
75 100
2.6 2.8
2.8 3.0
–20%
–20%
2.0
200
100
100
20
12
12
150 mA
2.9
V
3.1
V
20%
20%
V
mV
mA
mV
ms
15
mΩ
20
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