BQ24190_15 Datasheet, PDF (6/52 Pages) Texas Instruments – bq2419x I2C Controlled 4.5-A Single Cell USB/Adapter Charger with Narrow VDC Power Path Management and USB OTG

bq24190, bq24192, bq24192I
SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014
www.ti.com
8.2 ESD Ratings
V_(ESD) Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾
Charged device model (CDM), per JEDEC specification JESD22-
C101 ⁽²⁾
VALUE
1000
250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
8.3 Recommended Operating Conditions
V_IN
I_IN
I_SYS
V_BAT
Input voltage
Input current
Output current (SYS)
Battery voltage
Fast charging current
MIN
MAX
UNIT
3.9
17 ⁽¹⁾
V
3
A
4.5
A
4.4
V
4.5
A
I_BAT
Discharging current with internal MOSFET
6 (continuous)
9 (peak)
A
(up to 1 sec
duration)
T_A
Operating free-air temperature range
–40
85
°C
(1) The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BTST or SW pins. A tight
layout minimizes switching noise.
8.4 Thermal Information
THERMAL METRIC⁽¹⁾
bq2419x
RGE (24 PIN)
UNIT
R_θJA
R_θJCtop
R_θJB
ψ_JT
ψ_JB
R_θJCbot
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
32.2
29.8
9.1
°C/W
0.3
9.1
2.2
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
8.5 Electrical Characteristics
V_{VBUS_UVLOZ} < V_VBUS < V_ACOV and V_VBUS > V_BAT + V_SLEEP, T_J = –40°C to 125°C and T_J = 25°C for typical values unless other
noted.
PARAMETER
QUIESCENT CURRENTS
I_BAT
Battery discharge current (BAT, SW, SYS)
I_VBUS
Input supply current (VBUS)
I_OTGBOOST
Battery discharge current in boost mode
TEST CONDITIONS
MIN TYP
MAX UNIT
V_VBUS < V_UVLO, VBAT = 4.2 V, leakage between
BAT and VBUS
High-Z Mode, or no VBUS, BATFET disabled
(REG07[5] = 1), –40°C to 85°C
High-Z Mode, or no VBUS, REG07[5] = 0, –40°C
to 85°C
V_VBUS = 5 V, High-Z mode
V_VBUS = 17 V, High-Z mode
V_VBUS > V_UVLO, V_VBUS > V_BAT, converter not
switching
V_VBUS > V_UVLO, V_VBUS > V_BAT, converter
switching, V_BAT = 3.2 V, I_SYS = 0 A
V_VBUS > V_UVLO, V_VBUS > V_BAT, converter
switching, V_BAT = 3.8 V, I_SYS = 0 A
VBAT = 4.2 V, Boost mode, I_VBUS = 0 A,
converter switching
5 µA
12
20 µA
32
55 µA
15
30 µA
30
50 µA
1.5
3 mA
4
mA
15
mA
4
mA
6
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