BQ24158_12 Datasheet, PDF (7/45 Pages) Texas Instruments – Fully Integrated Switch-Mode One-Cell Li-Ion Charger

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bq24153A, bq24156A
bq24158, bq24159
SLUSAB0A – OCTOBER 2010 – REVISED FEBRUARY 2012
ELECTRICAL CHARACTERISTICS (continued)
Circuit of Figure 2, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (CD = 0), T_J = –40°C to 125°C, T_J = 25°C for typical values
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
PWM
Voltage from BOOT pin to SW pin
During charge or boost operation
6.5
V
Internal top reverse blocking MOSFET
on-resistance
I_IN(LIMIT) = 500 mA, Measured from VBUS to PMID
180
250
Internal top N-channel Switching MOSFET
on-resistance
Internal bottom N-channel MOSFET
on-resistance
Measured from PMID to SW,
V_BOOT – V_SW= 4V
Measured from SW to PGND
120
250 mΩ
110
210
f_(OSC)
Oscillator frequency
Frequency accuracy
–10%
3.0
MHz
10%
D_(MAX)
Maximum duty cycle
99.5%
D_(MIN)
Minimum duty cycle
0
Synchronous mode to non-synchronous
mode transition current threshold⁽³⁾
Low-side MOSFET cycle-by-cycle current sensing
100
mA
CHARGE MODE PROTECTION
V_{OVP_IN_USB}
V_{OVP-IN_DYN}
Input VBUS OVP threshold voltage
(bq24153A/8)
V_{(OVP_IN_USB)} hysteresis (bq24153A/8)
Input VBUS OVP threshold voltage
(bq24156A)
VBUS threshold to turn off converter during charge
VBUS falling from above V_{(OVP_IN_USB)}
Threshold over VBUS to turn off converter during
charge
6.3
6.5
170
9.57
9.8
6.7
V
mV
10
V_{(OVP_IN_DYN)} hysteresis (bq24156A/9)
VBUS falling from above V_{(OVP_IN_DYN)}
V_OVP
Output OVP threshold voltage
V_(OVP) hysteresis
V_(CSOUT) threshold over V_(OREG) to turn off charger
during charge
Lower limit for V_(CSOUT) falling from above V_(OVP)
I_LIMIT
Cycle-by-cycle current limit for charge
Charge mode operation
V_SHORT
Trickle to fast charge threshold
V_SHORT hysteresis
V_(CSOUT) rising
V_(CSOUT) falling below V_SHORT
I_SHORT
Trickle charge charging current
V_(CSOUT) ≤ V_SHORT)
BOOST MODE OPERATION FOR V_BUS (OPA_MODE = 1, HZ_MODE = 0, bq24153A/8 only)
V_{BUS_B}
Boost output voltage (to VBUS pin)
2.5V < V_(CSOUT) < 4.5 V
Boost output voltage accuracy
Including line and load regulation
140
110
117
121
%V_OREG
11
1.8
2.4
3.0
A
2.0
2.1
2.2
V
100
mV
20
30
40 mA
5.05
–3%
V
3%
I_BO
I_BLIMIT
V_BUSOVP
V_BATMAX
V_BATMIN
Maximum output current for boost
Cycle by cycle current limit for boost
Overvoltage protection threshold for boost
(VBUS pin)
V_{BUS_B} = 5.05 V, 2.5 V < V_(CSOUT) < 4.5 V
V_{BUS_B} = 5.05 V, 2.5 V < V_(CSOUT) < 4.5 V
Threshold over VBUS to turn off converter during
boost
V_BUSOVP hysteresis
Maximum battery voltage for boost (CSOUT
pin)
V_BUS falling from above V_BUSOVP
V_(CSOUT) rising edge during boost
V_BATMAX hysteresis
Minimum battery voltage for boost (CSOUT
pin)
V_(CSOUT) falling from above V_BATMAX
During boosting
Before boost starts
200
mA
1.0
A
5.8
6.0
6.2
V
162
mV
4.75
4.9 5.05
V
200
mV
2.5
V
2.9 3.05
V
Boost output resistance at high-impedance
mode (From VBUS to PGND)
CD = 1 or HZ_MODE = 1
217
kΩ
PROTECTION
T_SHTDWN)
Thermal trip
Thermal hysteresis
165
10
°C
T_CF
Thermal regulation threshold
Charge current begins to reduce
t_32S
32 second watchdog (WD) timer
32 Second or HOST mode
t_15M
15 minute safety timer
15 Minute mode
120
15
32
12
s
15 m
(3) Bottom N-channel FET always turns on for ~30 ns and then turns off if current is too low.
Copyright © 2010–2012, Texas Instruments Incorporated
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