BQ4822Y Datasheet, PDF (11/16 Pages) Texas Instruments – RTC Module With 8Kx8 NVSRAM

Read Cycle No. 1 (Address Access) ^1,2
Address
DOUT
tRC
tAA
tOH
Previous Data Valid
Read Cycle No. 2 (CE Access) ^1,3,4
tRC
CE
DOUT
tCLZ
High-Z
tACE
Read Cycle No. 3 (OE Access) ^1,5
tRC
Address
OE
DOUT
tAA
tOE
tOLZ
High-Z
tOHZ
Data Valid
Notes:
May 1997
1. WE is held high for a read cycle.
2. Device is continuously selected: CE = OE = VIL.
3. Address is valid prior to or coincident with CE transition low.
4. OE = VIL.
5. Device is continuously selected: CE = VIL.
11
bq4822Y
Data Valid
TD482201.eps
tCHZ
High-Z
TD482202.eps
High-Z
TD482203.eps