STB38N65M5 Datasheet, PDF (9/22 Pages) STMicroelectronics – N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET

STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5
Electrical characteristics
Figure 14. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.10
AM05459v1
ID = 250 µA
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100 TJ(°C)
Figure 16. Source-drain diode forward
characteristics
VSD
(V)
TJ=-50°C
1.2
AM05461v1
1.0
0.8
0.6
TJ=150°C
0.4
0.2
TJ=25°C
0
0 10 20 30 40 50 ISD(A)
Figure 18. Switching losses vs gate resistance
(1)
E
(μJ)
ID=20A
600 _VDD=400V
L=50µH
500
Eon
AM12643v1
Figure 15. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.1
1.9
VGS = 10 V
ID = 15 A
AM05460v1
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
Figure 17. Normalized V_DS vs temperature
VDS
(norm)
1.08
1.06
ID = 1mA
AM10399v1
1.04
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25 0
25 50 75 100 TJ(°C)
400
300
Eoff
200
100
0
0
10
20
30
40
1. Eon including reverse recovery of a SiC diode.
RG(Ω)
DocID022851 Rev 3
9/22