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STB38N65M5 Datasheet, PDF (1/22 Pages) STMicroelectronics – N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET
STB38N65M5, STF38N65M5,
STP38N65M5, STW38N65M5
N-channel 650 V, 0.073 Ω, 30 A MDmesh™ V Power MOSFET
2
in D PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet - production data
TAB
Features
2
3
1
D2PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
' Ć7$%
Order code
STB38N65M5
STF38N65M5
STP38N65M5
STW38N65M5
VDSS @ RDS(on)
TJmax
max
ID
< 0.095
710 V
Ω
30 A
• Worldwide best RDS(on) * area
• Higher VDSS rating and high dv/dt capability
• Excellent switching performance
• 100% avalanche tested
Applications
• Switching applications
* 
6 
$0Y
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STB38N65M5
STF38N65M5
STP38N65M5
STW38N65M5
Table 1. Device summary
Marking
Package
2
D PAK
38N65M5
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
March 2013
This is information on a product in full production.
DocID022851 Rev 3
1/22
www.st.com
22