STB38N65M5 Datasheet, PDF (3/22 Pages) STMicroelectronics – N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET

STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Value
Parameter
D²PAK
TO-220
TO-247
TO-220FP
V_GS Gate-source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D Drain current (continuous) at T_C = 100 °C
(1)
I_DM Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
(2)
dv/dt Peak diode recovery voltage slope
(3)
dv/dt MOSFET dv/dt ruggedness
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
T_stg Storage temperature
T_j Max. operating junction temperature
1. Limited by maximum junction temperature.
2. I_SD ≤ 30 A, di/dt ≤ 400 A/μs; V_Peak < V_(BR)DSS, V_{DD = 400 V}
3. V_DS ≤ 480 V
± 25
(1)
30
30
(1)
19
19
(1)
120
120
190
35
15
50
2500
- 55 to 150
150
Unit
V
A
A
A
W
V/ns
V/ns
V
°C
°C
Symbol
Parameter
Table 3. Thermal data
Value
D²PAK TO-220FP TO-220
Unit
TO-247
Thermal resistance junction-
R_{thj-case case max}
0.66
Thermal resistance junction-
R_thj-pcb
(1)
pcb max
30
Thermal resistance junction-
R_{thj-amb ambient max}
1. 1.When mounted on 1inch² FR-4 board, 2 oz Cu.
3.6
62.5
0.66
°C/W
°C/W
50 °C/W
DocID022851 Rev 3
3/22