STB38N65M5 Datasheet, PDF (5/22 Pages) STMicroelectronics – N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET

STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5
2
Electrical characteristics
Electrical characteristics
(T_C = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
Drain-source
V_{(BR)DSS breakdown voltage}
I_D = 1 mA, V_GS = 0
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
V_DS = 650 V
drain current (V_GS = 0) V_DS = 650 V, T_C=125 °C
Gate-body leakage
current (V_DS = 0)
V_GS = ± 25 V
Gate threshold voltage V_DS = V_GS, I_D = 250 μA
Static drain-source
on-resistance
V_GS = 10 V, I_D = 15 A
Min. Typ. Max. Unit
650
V
1 μA
100 μA
± 100 nA
3
4
5V
0.073 0.095 Ω
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
C_iss
oss
C
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 100 V, f = 1 MHz,
V_GS = 0
3000
pF
-
74
- pF
5.8
pF
o(tr)(1)
C
Equivalent
capacitance time
related
Equivalent
o(er)(2)
C
capacitance energy
related
V_DS = 0 to 520 V, V_GS = 0
- 244 - pF
-
70
- pF
Intrinsic gate
R_{G resistance}
f = 1 MHz open drain
-
2.4
-
Ω
Q_g Total gate charge
V_DD = 520 V, I_D = 15 A,
Q_gs Gate-source charge V_GS = 10 V
Q_gd Gate-drain charge
(see Figure 20)
71
nC
-
18
- nC
30
nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C_oss when
V_DS increases from 0 to 80% V_DSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C_oss
when V_DS increases from 0 to 80% V_DSS
DocID022851 Rev 3
5/22