STB38N65M5 Datasheet, PDF (10/22 Pages) STMicroelectronics – N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET

Test circuits
3
Test circuits
STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
9''
9'
9*6
5*
3:
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9
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N½
½
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9*
N½
3:
N½
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Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test circuit
*
 ½
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'87
6
%
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/ ½ +
%

%
½)
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,'
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Figure 23. Unclamped inductive waveform
9%5'66
9'
3Z
$0Y
Figure 24. Switching time waveform
Inductive Load Turn - off
Id
90%Vds
90%Id
9''
,'0
,'
9''
Vgs
90%Vgs on
10%Vds
Vds
Vgs(I(t))
$0Y
td(v)
tr(v)
tf(i)
tc(off)
10%Id
AM05540v1
10/22
DocID022851 Rev 3