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STB38N65M5 Datasheet, PDF (4/22 Pages) STMicroelectronics – N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET
Electrical ratings
STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetetive or not repetetive
IAR (pulse width limited by Tjmax )
8
A
EAS
Single pulse avalanche energy (starting tj = 25°C,
Id= IAR; Vdd= 50V)
660
mJ
4/22
DocID022851 Rev 3