STB38N65M5 Datasheet, PDF (8/22 Pages) STMicroelectronics – N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET

Electrical characteristics
STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5
Figure 8. Output characteristics
ID
(A)
VGS = 10 V
80
AM12637v1
VGS = 8 V
VGS = 7 V
60
Figure 9. Transfer characteristics
ID
AM12638v1
(A)
80
VDS= 25V
60
40
40
VGS = 6 V
20
20
0
0
5 10 15 20 25 VDS(V)
0
3 4 5 6 7 8 VGS(V)
Figure 10. Gate charge vs gate-source voltage
VGS
(V)
12 ^VDS
VDD=520V
ID=15A
AM12639v1
VDS
(V)
500
400
Figure 11. Static drain-source on-resistance
RDS(on)
(Ω)
0.088
0.076
VGS=10V
AM12640v1
0.074
8
300
0.072
0.070
200
4
0.068
100
0.066
0
0
0
20
40
60
80 Qg(nC)
0.064
0
5 10 15 20 25 ID(A)
Figure 12. Capacitance variations
Figure 13. Output capacitance stored energy
C
(pF)
10000
AM12641v1
Eoss
(µJ)
14
12
AM12642v1
1000
Ciss
10
8
100
10
1
0.1
1
Coss
Crss
10
100 VDS(V)
6
4
2
0
0 100 200 300 400 500 600 VDS(V)
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DocID022851 Rev 3