STD11N65M2 Datasheet, PDF (8/21 Pages) STMicroelectronics – Extremely low gate charge

Electrical characteristics
STD11N65M2, STP11N65M2, STU11N65M2
Figure 14. Source-drain diode forward
characteristics
VSD (V)
GIPD251020131114SA
1.4
Figure 15. Output capacitance stored energy
Eoss(µJ)
GIPD251020131124SA
1.2
3
TJ=-50°C
1
0.8
2
0.6
TJ=150°C
TJ=25°C
0.4
1
0.2
0
0 1 2 3 4 5 6 ISD(A)
0
0 100 200 300 400 500 600 VDS(V)
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