STD11N65M2 Datasheet, PDF (5/21 Pages) STMicroelectronics – Extremely low gate charge

STD11N65M2, STP11N65M2, STU11N65M2
Electrical characteristics
Symbol
Table 7. Switching times
Parameter
Test conditions
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 325 V, I_D = 3.5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 16 and 21)
Min. Typ. Max. Unit
- 9.5 - ns
- 7.5 - ns
- 26 - ns
- 15 - ns
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
-
(1) (2)
I_SDM
Source-drain current (pulsed)
-
(3)
V_SD
Forward on voltage
V_GS = 0, I_SD = 7 A
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
-
(2)
I_SD = 7 A , di/dt = 100 A/μs
V_DD = 60 V (see Figure 18)
-
-
t_rr Reverse recovery time
-
I_SD = 7 A, di/dt = 100 A/μs
Q_rr Reverse recovery charge
V_DD = 60 V, T_j=150 °C
-
(see Figure 18)
I_RRM Reverse recovery current
-
1. Pulse width limited by safe operating area
2. Test condition is referred to through-hole package
3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
7A
28 A
1.6 V
318
ns
2.5
nC
15.5
A
437
ns
3.2
nC
15
A
DocID026376 Rev 1
5/21
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