STD11N65M2 Datasheet, PDF (6/21 Pages) STMicroelectronics – Extremely low gate charge

Electrical characteristics
STD11N65M2, STP11N65M2, STU11N65M2
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK and
IPAK
ID
GIPG120520141711SA
(A)
Figure 3. Thermal impedance for DPAK and
IPAK
10
1
0.1
0.01
0.1
OpeLriamtiiotendinbythmisaaxreRa^DSis(on)
10µs
100µs
1ms
10ms
TC=150°C
Tamb=25°C
Single pulse
1
10
100 VDS(V)
Figure 4. Safe operating area for TO-220
ID
GIPG120520141723SA
(A)
Figure 5. Thermal impedance for TO-220
10
1
OpeLriamtiiotendinbythmisaaxreRa^DSis(on)
10µs
100µs
1ms
10ms
0.1
0.01
0.1
1
TC=150°C
Tamb=25°C
Single pulse
10
100 VDS(V)
Figure 6. Output characteristics
ID
GIPD241020131645FSR
(A)
VGS= 8, 9, 10V
14
12
7V
10
6V
8
6
4
5V
2
0
0
5
10
15
20 VDS(V)
Figure 7. Transfer characteristics
ID(A)
GIPD241020131653FSR
14
VDS=19V
12
10
8
6
4
2
0
0
24
6
8
10 VGS(V)
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DocID026376 Rev 1