STD11N65M2 Datasheet, PDF (3/21 Pages) STMicroelectronics – Extremely low gate charge

STD11N65M2, STP11N65M2, STU11N65M2
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
V_GS
(1)
I_D
(1)
I_D
(2)
I_DM
(1)
P_TOT
(3)
dv/dt
(4)
dv/dt
Gate-source voltage
Drain current (continuous) at T_c = 25 °C
Drain current (continuous) at T_c = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
(starting T_j = 25 °C, I_D= I_AS, V_DD = 50 V)
MOSFET dv/dt ruggedness
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
T_stg Storage temperature
T_j
Max. operating junction temperature
1. The value is rated according to R_thj-case and limited by package.
2. Pulse width limited by T_jmax
3. I_SD ≤ 7 A, di/dt ≤ 400 A/μs; V_{DS peak} < V_(BR)DSS, V_DD=80% V_(BR)DSS.
4. V_DS ≤ 520 V
± 25
7
4.4
28
85
15
50
2500
- 55 to 150
150
Unit
V
A
A
A
W
V/ns
V/ns
V
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-amb Thermal resistance junction-amb max
(1)
R_thj-pcb Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4 board, 2 oz Cu
DPAK
50
Value
TO-220
1.47
62.5
IPAK
100
Unit
°C/W
°C/W
°C/W
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not
I_AR
repetitive (pulse width limited by T_jmax)
Single pulse avalanche energy (starting
E_AS
T_j=25°C, I_D= I_AR; V_DD=50)
1.5
A
110
mJ
DocID026376 Rev 1
3/21
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