STD11N65M2 Datasheet, PDF (7/21 Pages) STMicroelectronics – Extremely low gate charge

STD11N65M2, STP11N65M2, STU11N65M2
Electrical characteristics
Figure 8. Normalized V_(BR)DSS vs temperature
V(BR)DSS
(norm)
ID=1 mA
GIPD251020131007SA
1.09
1.07
1.05
1.03
1.01
0.99
0.97
0.95
0.93
-50 -25 0 25 50 75 100 125 TJ(°C)
Figure 10. Gate charge vs gate-source voltage
VGS
(V) _VDS
12
VDD=520V
ID=7A
GIPD251020131029SA
VDS
(V)
500
10
400
8
300
6
200
4
2
100
0
0 24
6 8 10 12
0
Qg(nC)
Figure 12. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
GIPD251020131132SA
1.1
ID=250µA
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 TJ(°C)
Figure 9. Static drain-source on-resistance
RDS(on)
(Ω)
0.630
GIPG200120141659FSR
VGS=10V
0.620
0.610
0.600
0.590
0.580
0.570
0 1 2 3 4 5 6 7 ID(A)
Figure 11. Capacitance variations
C
(pF)
GIPD251020131055SA
1000
Ciss
100
Coss
10
1
Crss
0.1
0.1
1
10
100 VDS(V)
Figure 13. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.5
2.3
2.1
1.9
1.7
ID=3.5A
VGS=10V
GIPG200120141706FSR
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 TJ(°C)
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