STD11N65M2 Datasheet, PDF (1/21 Pages) STMicroelectronics – Extremely low gate charge

STD11N65M2, STP11N65M2,
STU11N65M2
N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Q_g
Power MOSFETs in DPAK, TO-220 and IPAK packages
Datasheet - preliminary data
TAB
3
1
DPAK
TAB
TAB
3
2
1
TO-220
3
2
1
IPAK
Figure 1. Internal schematic diagram
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Features
Order codes
STD11N65M2
STP11N65M2
STU11N65M2
V_DS
R_DS(on) max I_D
650 V
0.67 Ω
7A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
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These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STD11N65M2
STP11N65M2
STU11N65M2
Table 1. Device summary
Marking
Package
11N65M2
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
May 2014
DocID026376 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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