STB4N62K3 Datasheet, PDF (8/18 Pages) STMicroelectronics – N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET

Electrical characteristics
STB4N62K3, STD4N62K3
Figure 14. Maximum avalanche energy vs
starting Tj
Figure 15. Normalized B_VDSS vs temperature
EAS
(mJ)
120
110
100
90
80
70
60
50
40
30
20
10
0
0
ID=3.8 A
VDD=50 V
AM07184v1
20 40 60 80 100 120 140 TJ(°C)
BVDSS
(norm)
1.10
AM07183v1
1.05
1.00
0.95
0.90
-75 -25
25
75
125 TJ(°C)
Figure 16. Source-drain diode forward
characteristics
VSD(V)
1.0
0.9
0.8
TJ=150°C
AM08888v1
TJ=25°C
0.7
TJ=-50°C
0.6
0.5
0.4
0.3
0.2
0.1
01
2
3
4
5 ISD(A)
8/18
Doc ID 18337 Rev 2