STB4N62K3 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET

STB4N62K3, STD4N62K3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D²PAK
DPAK
V_DS Drain-source voltage
V_GS Gate- source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D Drain current (continuous) at T_C = 100 °C
I_DM ⁽¹⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
I_AR
Avalanche current, repetitive or not-
repetitive (pulse width limited by T_j max)
Single pulse avalanche energy
E_{AS (starting Tj = 25°C, ID = IAR, VDD = 50V)}
Gate source ESD(HBM-C = 100 pF,
V_{ESD(G-S) R = 1.5 kΩ)}
dv/dt ⁽²⁾ Peak diode recovery voltage slope
620
± 30
3.8
2
15.2
70
3.8
115
2500
12
V_ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
T_stg Storage temperature
T_j Max. operating junction temperature
- 55 to 150
150
1. Pulse width limited by safe operating area.
2. I_SD ≤ 3.8 A, di/dt = 400 A/µs, V_DD = 80% V_(BR)DSS, VDS peak ≤ V(BR)DSS_.
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb ⁽¹⁾ Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
DPAK
1.79
50
Value
D²PAK
30
Unit
V
V
A
A
A
W
A
mJ
V
V/ns
V
°C
°C
Unit
°C/W
°C/W
Doc ID 18337 Rev 2
3/18