STB4N62K3 Datasheet, PDF (6/18 Pages) STMicroelectronics – N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET

Electrical characteristics
STB4N62K3, STD4N62K3
2.1
Electrical characteristics (curves)
Figure 2.
ID
(A)
Safe operating area for D²PAK
Figure 3.
AM07172v1
Thermal impedance for D²PAK
10
1
OpeLri^a_mtiiotendin^{bythmisaaxreRaDSis(on)}
0.1
Tj=150°C
Tc=25°C
Single pulse
10µs
100µs
1ms
10ms
0.01
0.1
1
10
100 VDS(V)
Figure 4.
ID
(A)
Safe operating area for DPAK
Figure 5.
AM07173v1
Thermal impedance for DPAK
10
1
OpeLri^a_mtiiotendin^{bythmisaaxreRaDSis(on)}
0.1
Tj=150°C
Tc=25°C
Single pulse
10µs
100µs
1ms
10ms
0.01
0.1
1
10
100 VDS(V)
Figure 6. Output characteristics
Figure 7. Transfer characteristics
ID(A)
8
7
6
5
VGS=10V
AM07175v1
ID
(A)
7V
6
5
4
VDS=15V
4
6V
3
2
1
5V
0
0
5 10 15 20 25 VDS(V)
3
2
1
0
0
2
4
6
8
AM07176v1
VGS(V)
6/18
Doc ID 18337 Rev 2