STB4N62K3 Datasheet, PDF (7/18 Pages) STMicroelectronics – N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET

STB4N62K3, STD4N62K3
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on resistance
VGS
(V) _VDS
12
10
8
6
4
2
VDD=496V
ID=3.8A
AM07177v1
VGS
500
400
300
200
100
RDS(on)
(Ω)
1.9
1.8
1.7
1.6
VGS=10V
AM07178v1
0
0
0
5 10 15 20 25 Qg(nC)
1.5
0
1
2
3
ID(A)
Figure 10. Capacitance variations
C
(pF)
1000
Figure 11. Output capacitance stored energy
AM07179v1
Eoss
(µJ)
AM07180v1
3.0
Ciss
2.5
2.0
100
1.5
10
1
0.1
1
Coss
Crss
10
100 VDS(V)
1.0
0.5
0
0 100 200 300 400 500 600 VDS(V)
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.10
AM07181v1
RDS(on)
(norm)
2.5
AM07182v1
1.00
2.0
1.5
0.90
1.0
0.80
0.5
0.70
-75
-25
25
75
125
TJ(°C)
-75 -25
25
75
125 TJ(°C)
Doc ID 18337 Rev 2
7/18