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STB4N62K3 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET
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Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
VGS = 0, ID = 1 mA
Zero gate voltage
IDSS
drain current
IGSS
Gate-body leakage
current
VGS = 0, VDS = 620V
VGS = 0
VDS = 620V, TC=125 °C
VDS = 0, VGS = ± 20 V
VGS(th)
RDS(on
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on-
resistance
VGS = 10 V, ID = 1.9 A
STB4N62K3, STD4N62K3
Min. Typ. Max. Unit
620
V
1 µA
50 µA
± 10 µA
3 3.75 4.5 V
1.7
2
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
550
pF
-
42
- pF
7
pF
Coss
(1)
eq.
Equivalent output
capacitance
VDS = 0 to 496 V, VGS = 0
-
27
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
2
5
10 Ω
Qg Total gate charge
VDD = 496 V, ID = 3.8 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 18)
22
nC
-
4
- nC
13
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 300 V, ID = 1.9 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
Min. Typ. Max. Unit
10
ns
9
ns
-
-
29
ns
19
ns
4/18
Doc ID 18337 Rev 2
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