STB4N62K3 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET

STB4N62K3,
STD4N62K3
N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3™ Power MOSFET
in D²PAK and DPAK packages
Datasheet — production data
Features
Order codes
STB4N62K3
STD4N62K3
V_DSS R_DS(on) max I_D
620 V < 2 Ω 3.8 A
Pw
70 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Application
■ Switching applications
Description
These devices are made using the
SuperMESH3™ Power MOSFET technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting product has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
TAB
3
1
DPAK
TAB
3
1
D²PAK
Figure 1.
Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
STB4N62K3
STD4N62K3
Marking
4N62K3
Package
D²PAK
DPAK
Packaging
Tape and reel
April 2012
This is information on a product in full production.
Doc ID 18337 Rev 2
1/18
www.st.com
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