STB4N62K3 Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET

STB4N62K3, STD4N62K3
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 3.8 A, V_GS = 0
3.8 A
-
15.2 A
-
1.6 V
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
220
I_SD = 3.8 A, di/dt = 100 A/µs
-
1.4
V_DD = 60 V (see Figure 22)
13
ns
µC
A
t_rr
Reverse recovery time
I_SD = 3.8 A, di/dt = 100 A/µs
270
ns
Q_rr Reverse recovery charge
V_DD = 60 V, T_j = 150 °C
- 1.9
µC
I_RRM Reverse recovery current
(see Figure 22)
14
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
BV_GSO
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
Min. Typ. Max. Unit
30
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 18337 Rev 2
5/18