PD57060-E Datasheet, PDF (8/21 Pages) STMicroelectronics – RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Typical performance (PD57060S)
PD57060-E, PD57060S-E
Figure 10. Drain efficiency vs bias current
Nd (%)
70
60
890MHz
50
960MHz
40
945MHz
925MHz
Figure 11. Output power vs supply voltage
Pout (W)
70
60
50
945MHz
925MHz
890MHz
960MHz
40
30
30
20
20
Pin=32.8dBm
VDS=28V
10
10
0
0.5
1
1.5
2
2.5
10
IDQ (A)
Pin=32.8dBm
IDQ=100mA
15
20
25
30
VDS (V)
Figure 12. Drain efficiency vs supply voltage Figure 13. Output power vs gate-source
voltage
Nd (%)
70
60
50
40
30
20
10
10
890MHz
945MHz
925MHz
960MHz
Pin=32.8dBm
IDQ=100mA
15
20
25
30
VDS (V)
Pout (W)
80
70
60
50
40
30
20
10
0
1
925MHz
890MHz
960MHz
9455MHz
2
3
VGS (V)
Pin=32.8dBm
VDS=28v
4
5
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