PD57060-E Datasheet, PDF (4/21 Pages) STMicroelectronics – RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Electrical characteristics
2
Electrical characteristics
PD57060-E, PD57060S-E
2.1
T_CASE = +25 ^oC
Static
Table 3. Static
Symbol
V_(BR)DSS
I_DSS
I_GSS
V_GS(Q)
V_DS(ON)
G_FS
C_ISS
C_OSS
C_RSS
V_GS = 0 V
V_GS = 0 V
V_GS = 20 V
V_DS = 28 V
V_GS = 10 V
V_DS = 10 V
V_GS = 0 V
V_GS = 0 V
V_GS = 0 V
Test conditions
I_DS = 1 mA
V_DS = 28 V
V_DS = 0 V
I_D = 100 mA
I_D = 3 A
I_D = 3 A
V_DS = 28 V
V_DS = 28 V
V_DS = 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min Typ Max Unit
65
V
1 µA
1 µA
2.0
4.0 V
0.7 0.8 V
2.5
mho
83
pF
58
pF
3
pF
2.2
Dynamic
Table 4. Dynamic
Symbol
Test conditions
P_OUT V_DD = 28 V I_DQ = 100 mA
G_PS V_DD = 28 V I_DQ = 100 mA P_{OUT =} 60 W
η_D
V_DD = 28 V I_DQ = 100 mA P_OUT = 60 W
Load ^VDD ^{= 28 V I}DQ ^{= 100 mA P}OUT = ^60W
Mismatch _{All Phase Angles}
Min
f = 945MHz 60
f = 945MHz
f = 945MHz
f = 945MHz
5:1
Typ
14.3
54
Max Unit
W
dB
%
VSWR
4/21