PD57060-E Datasheet, PDF (3/21 Pages) STMicroelectronics – RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD57060-E, PD57060S-E
1
Electrical data
1.1
Maximum ratings
Table 1. Absolute maximum ratings (T_CASE = 25°C)
Symbol
Parameter
V_(BR)DSS
V_GS
I_D
P_DISS
T_J
T_STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70°C)
Max. Operating Junction Temperature
Storage Temperature
1.2
Thermal data
Table 2. Thermal data
Symbol
Parameter
R_thJC
Junction - case thermal resistance
Electrical data
Value
Unit
65
V
± 20
V
7
A
79
W
165
°C
-65 to +150
°C
Value
1.0
Unit
°C/W
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