PD57060-E Datasheet, PDF (1/21 Pages) STMicroelectronics – RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD57060-E
PD57060S-E
RF POWER Transistors, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 60W with 14.3dB gain @ 945MHz / 28V
■ New RF plastic package
Description
The PD57060-E is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
MOSFET. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 28V in common source mode at
frequencies of up to 1GHz. PD57060-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first
true SMD plastic RF power package, PowerSO-
10RF. PD57060-E’s superior linearity
performance makes it an ideal solution for base
station applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optmized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Pin connection
Source
Gate
Drain
Order codes
Part number
PD57060-E
PD57060S-E
PD57060TR-E
PD57060STR-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Marking
PD57060
PD57060S
PD57060
PD57060S
January 2007
Rev 3
Packaging
Tube
Tube
Tape and reel
Tape and reel
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www.st.com
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