PD57060-E Datasheet, PDF (6/21 Pages) STMicroelectronics – RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Typical performance (PD57060S)
4
Typical performance (PD57060S)
PD57060-E, PD57060S-E
Figure 2. Capacitance vs supply voltage
Figure 3. Drain current vs gate source
voltage
C (pF)
1000
Id (A)
8
7
6
100
Ciss
5
Coss
4
3
10
Crss
2
f = 1 MHz
1
0
5
10
15
20
25
30
VDS (V)
1
VDS=10 V
0
2
2.5
3
3.5
4
4.5
5
5.5
6
VGS (V)
Figure 4. Gate-source voltage vs
case temperature
Figure 5. Output power vs input power
VGS (Normalized)
1.06
1.04
1.02
1
0.98
0.96
0.94
VDS = 10 V
0.92
-25
0
Id = 5 A
Id = 4 A
Id = 3 A
Id = 2 A
Id = 1 A
Id = 0.5 A
25
50
75
100
Tc (°C)
Pout (W)
80
70
60
50
40
30
20
10
0
0
0.5
925MHz
890MHz
945MHz
960MHz
VDS=28V
IDQ=100mA
1
1.5
2
2.5
3
3.5
4
Pin (W)
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