PD57060-E Datasheet, PDF (10/21 Pages) STMicroelectronics – RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Test circuit
PD57060-E, PD57060S-E
Table 6. Test circuit component part list
Component
Description
L1,L2
INDUCTOR, 5 TURNS AIR WOUND #22AWG, ID 0.059{1.49}, NYLON COATED
MAGNET WIRE
FB1,FB2
R1
R2
R3
SHIELD BEAD SURFACE MOUNT EMI
18 kΩ, 1 W SURFACE MOUNT CHIP RESISTOR
4.7 MΩ, 1 W SURFACE MOUNT CHIP RESISTOR
120 Ω, 2 W SURFACE MOUNT CHIP RESISTOR
C1,C2 3 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C3,C10,C11
,C15
47 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C4,C9 0.8-8.0 pF GIGA TRIM VARIABLE CAPACITOR
C5,C6,C7,C
8
7.5 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C12
C13,C17
C14
1000 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR
0.1 µF, 500 V SURFACE MOUNT CERAMIC CHIP CAPACITOR
10 µF, 50 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR
C16
C18
BOARD
100 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
220 µF, 63 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR
ROGER, ULTRA LAM 2000, THK 0.030”, εr = 2.55 2oz. ED Cu 2 SIDES.
10/21