PD57060-E Datasheet, PDF (7/21 Pages) STMicroelectronics – RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD57060-E, PD57060S-E
Typical performance (PD57060S)
Figure 6. Power gain vs output power
Gp (dB)
18
16
14
12
890MHz
925MHz
945MHz
960MHz
10
8
6
4
VDS=28V
IDQ=100mA
2
0
10 20 30 40 50 60 70 80
Pout (W)
Figure 7. Drain efficiency vs output power
Nd (%)
70
925MHz
60
945MHz
960MHz
50
890MHz
40
30
20
0
VDS=28V
IDQ=100mA
10 20 30 40 50 60 70 80
Pout (W)
Figure 8. Input return loss vs output power Figure 9. Output power vs bias current
RL (dB)
0
890MHz
-10
960MHz
925MHz
-20
Pout (W)
80
70
60
50
40
890MHz
960MHz
925MHz
945MHz
945MHz
-30
-40
0
VDS=28V
IDQ=100mA
10
20
30
40
50
60
70
80
Pout (W)
30
20
10
0
0.5
1
1.5
IDQ (A)
Pin=32.8dBm
VDS=28V
2
2.5
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