STD85N10F7AG Datasheet, PDF (7/16 Pages) STMicroelectronics – High avalanche ruggedness

STD85N10F7AG
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
C
(pF)
3500
3000
2500
2000
1500
1000
AM15975v1
Ciss
VGS(th)
(norm)
1.2
1
0.8
0.6
0.4
ID=250µA
AM15976v1
500
0
0
20
40
Coss
Crss
60
80 VDS(V)
0.2
0
-55 -30 -5 20 45 70 95 120 TJ(°C)
Figure 10. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2
ID=40A
VGS=10V
AM15977v1
1.5
1
0.5
0
-55 -30 -5 20 45 70 95 120 TJ(°C)
Figure 12. Normalized V_DS vs temperature
VDS
(norm)
1.04
ID=1mA
AM15979v1
1.03
1.02
1.01
1
0.99
0.98
0.97
0.96
-55 -30 -5 20 45 70 95 120 TJ(°C)
Figure 11. Source-drain diode forward
characteristics
VSD
(V)
1.1
1
TJ=-55°C
AM15978v1
0.9
0.8
0.7
0.6
0.5
0
TJ=150°C
TJ=25°C
20
40
60
80
ISD(A)
DocID027030 Rev 2
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