STD85N10F7AG Datasheet, PDF (3/16 Pages) STMicroelectronics – High avalanche ruggedness

STD85N10F7AG
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage
V_GS
Gate-source voltage
I_D
I_DM ⁽¹⁾
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_TOT
Total dissipation at T_C = 25 °C
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area.
Symbol
R_thj-pcb
R_thj-case
Table 3. Thermal data
Parameter
Thermal resistance junction-pcb max
Thermal resistance junction-case max
Value
Unit
100
V
± 20
V
70
A
48
280
A
85
W
- 55 to 175
°C
Value
50
1.76
Unit
°C/W
DocID027030 Rev 2
3/16
16