STD85N10F7AG Datasheet, PDF (1/16 Pages) STMicroelectronics – High avalanche ruggedness

STD85N10F7AG
Automotive-grade N-channel 100 V, 0.0085 Ω typ., 70 A
STripFET™ F7 Power MOSFET in a DPAK package
Datasheet - production data
TAB
3
1
DPAK
Features
Order code
V_DS
R_DS(on)
max
STD85N10F7AG 100 V 0.010 Ω
I_D
70 A
P_TOT
85 W
• Designed for automotive applications and
AEC-Q101 qualified
• Among the lowest R_DS(on) on the market
• Excellent figure of merit (FoM)
• Low C_rss/C_iss ratio for EMI immunity
• High avalanche ruggedness
Figure 1. Internal schematic diagram
Applications
• Switching applications
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Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
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Order code
STD85N10F7AG
Table 1. Device summary
Marking
Package
85N10F7
DPAK
Packing
Tape and reel
May 2015
This is information on a product in full production.
DocID027030 Rev 2
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