STD85N10F7AG Datasheet, PDF (6/16 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
2.1
Electrical characteristics (curves)
STD85N10F7AG
Figure 2. Safe operating area
ID
GIPD220720131539FSR
(A)
100
10
OpLeirmaittieodn ^{binytmhisaxarReDaSi(son)}
100µs
1
0.1
0.1
Tj=175°C
Tc=25°C
Sinlge
pulse
1ms
10ms
1
10
VDS(V)
Figure 4. Output characteristics
ID(A)
300
250
200
150
AM15971v1
VGS=10 V
9V
8V
7V
100
6V
50
5V
0
0
2
4
6
8
VDS(V)
Figure 3. Thermal impedance
K
δ=0.5
AM18025v1
0.2
0.1
10^-1
0.05
0.02
0.01
c
Single pulse
10^-2
10^-5
10^-4 10^-3 10^{-2 10-1} 10^{0 tp(s)}
Figure 5. Transfer characteristics
ID (A)
AM15972v1
300
V_DS=9V
250
200
150
100
50
0
2
4
6
8
10 VGS(V)
Figure 6. Static drain-source on-resistance Figure 7. Gate charge vs gate-source voltage
RDS(on)
(mΩ)
9.1
8.9
VGS=10V
AM18070v1
VGS
(V)
12
10
VDD=50V
ID=70A
AM15974v1
8.7
8.5
8.3
8.1
7.9
7.7
7.5
0
20
40
60
80
ID(A)
8
6
4
2
0
0 10 20 30 40 50 Qg(nC)
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